1998. 6. 15 1/3 semiconductor technical data kn4402s/4403s epitaxial planar pnp transistor revision no : 1 general purpose application. switching application. features h complementary to the kn4400s/4401s maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. emitter 2. base 3. collector note : * package mounted on 99.5% alumina 10 ? 8 ? 0.6 x ) type name marking lot no. zva type name lot no. zwa characteristic symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current i c -600 ma collector power dissipation p c * 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? type mark kn4402s zva KN4403S zwa mark spec
1998. 6. 15 2/3 kn4402s/4403s revision no : 1 electrical characteristics (ta=25 ? ) * pulse test : pulse width " 300 s, duty cycle " 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =-35v, v eb =-0.4v - - -100 na collector cut-off current i cbo v cb =-40v, i e =0 - - -100 na collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -40 - - v collector-emitter breakdown voltage * v (br)ceo i c =-1ma, i b =0 -40 - - v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 - - v dc current gain * KN4403S h fe (1) v ce =-1v, i c =-0.1ma 30 - - kn4402s h fe (1) v ce =-1v, i c =-1ma 30 - - KN4403S h fe (2) 60 - - kn4402s h fe (2) v ce =-1v, i c =-10ma 50 - - KN4403S h fe (3) 100 - - kn4402s h fe (3) v ce =-2v, i c =-150ma 50 - 150 KN4403S h fe (4) 100 - 300 kn4402s h fe (4) v ce =-2v, i c =-500ma 20 - - KN4403S h fe (5) 20 - - collector-emitter saturation voltage * v ce(sat) 1 i c =-150ma, i b =-15ma - - -0.4 v v ce(sat) 2 i c =-500ma, i b =-50ma - - -0.75 base-emitter saturation voltage * v be(sat) 1 i c =-150ma, i b =-15ma -0.75 - -0.95 v v be(sat) 2 i c =-500ma, i b =-50ma - - -1.3 transition frequency f t v ce =-10v, i c =-20ma f=100mhz 200 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 8.5 pf
1998. 6. 15 3/3 kn4402s/4403s revision no : 1 collector current i (ma) c -1 0 base-emitter voltage v (v) be i - v h - i c collector current i (ma) -1 -3 -10 -30 1 dc current gain h collector-base voltage v (v) capacitance c -1 -3 1 3 cb(pf) -30 -10 cb c - v collector current i (ma) saturation voltage -1 -3 be(sat) -10 -30 c v ,v - i fe -100 -300 -1k 3 10 30 100 300 1k v =-2v ce -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -10 -30 -100 -200 -3 v =-10v ce c fe be c be(sat) ce(sat) c ce(sat) v ,v (v) -100 -300 -1k -0.01 -0.03 -0.1 -0.3 -1 -3 -10 v be(sat) ce(sat) v i /i =10 c b cb cb -100 5 10 30 50 100 f=140khz i =0 e
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